【論文/Paper】 谷山君(M1)のSOI上のInGaAsナノワイヤ縦型TFETに関する論文がJpn. J. Appl. Phys.に掲載されました!
- Katsuhiro Tomioka
- 4月28日
- 読了時間: 1分
Keita's paper regarding InGaAs VGAA-TFET on SOI was published in Jpn. J. Appl. Phys. 64 (2025) 04SP62 !! Congrats!!
Paper Link ↓
Origin of performance degradation in vertical gate-all-around transistors using vertical InGaAs nanowires on SOI(111) substrates
Keita Taniyama, Yuki Takeda, Yuki Azuma, Ziye Zheng and Katsuhiro Tomioka
Published 28 April 2025 • © 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing LtdJapanese Journal of Applied Physics, Volume 64, Number 4 Citation Keita Taniyama et al 2025 Jpn. J. Appl. Phys. 64 04SP62DOI 10.35848/1347-4065/adc464



























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